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Kingston 9905402-665.A00LF 4GB
A-DATA Technology DDR4 3000 8GB

Kingston 9905402-665.A00LF 4GB vs A-DATA Technology DDR4 3000 8GB

总分
star star star star star
Kingston 9905402-665.A00LF 4GB

Kingston 9905402-665.A00LF 4GB

总分
star star star star star
A-DATA Technology DDR4 3000 8GB

A-DATA Technology DDR4 3000 8GB

差异 规格 评论

差异

Kingston 9905402-665.A00LF 4GB 需要考虑的原因
Kingston 9905402-665.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 30
    左右 3% 更低的延时
A-DATA Technology DDR4 3000 8GB 需要考虑的原因
A-DATA Technology DDR4 3000 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17 left arrow 10.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 5.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9905402-665.A00LF 4GB
A-DATA Technology DDR4 3000 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 30
  • 读取速度，GB/s
    10.8 left arrow 17.0
  • 写入速度，GB/s
    5.5 left arrow 13.4
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1824 left arrow 3272

Kingston 9905402-665.A00LF 4GB RAM的比较

Kingston 9905402-174.A00G 4GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB

A-DATA Technology DDR4 3000 8GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M3 93T5750CZA-CE6 2GB
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SK Hynix HMT351U6CFR8C-H9 4GB
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Samsung M393B2G70BH0-CH9 16GB
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Team Group Inc. ZEUS-2133 8GB
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内存RAM
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Samsung M3 78T5663RZ3-CE6 2GB
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Mushkin MR[A/B]4U280HHHH8G 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Nanya Technology NT4GC72B4NA1NL-CG 4GB
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内存RAM