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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kllisre M471A3243BB0-CP50 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kllisre M471A3243BB0-CP50 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Kllisre M471A3243BB0-CP50 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
60
左右 60% 更低的延时
需要考虑的原因
Kllisre M471A3243BB0-CP50 16GB
报告一个错误
更快的读取速度,GB/s
17.1
16
测试中的平均数值
更快的写入速度,GB/s
13.8
12.5
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kllisre M471A3243BB0-CP50 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
60
读取速度,GB/s
16.0
17.1
写入速度,GB/s
12.5
13.8
内存带宽,mbps
19200
25600
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2925
2687
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Kllisre M471A3243BB0-CP50 16GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Avant Technology J642GU42J5213NF 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kllisre M471A3243BB0-CP50 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Wilk Elektronik S.A. GX2133D464L15S/8G 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CMK16GX4M2C3200C16 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMK16GX4M2B3200C14 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kllisre KRE-D3S1600M/8G 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Samsung M391B5673EH1-CH9 2GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
Kingston KP223C-ELD 2GB
Kingston KHX2400C12D4/8GX 8GB
Micron Technology 8JTF51264AZ-1G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C
Samsung M393B1K70CH0-CH9 8GB
Ramaxel Technology RMUA5110MB78HAF-2400 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK16GX4M4B3200C16 4GB
报告一个错误
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Bug description
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