Kingston 9905403-011.A03LF 2GB vs G Skill Intl F4-2400C16-16GFXR 16GB

总分

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

总分

G Skill Intl F4-2400C16-16GFXR 16GB

G Skill Intl F4-2400C16-16GFXR 16GB

差异规格评论

差异

Kingston 9905403-011.A03LF 2GB

需要考虑的原因
Kingston 9905403-011.A03LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

G Skill Intl F4-2400C16-16GFXR 16GB

需要考虑的原因
G Skill Intl F4-2400C16-16GFXR 16GB

报告一个错误

更快的读取速度，GB/s

13.5 13

测试中的平均数值
更快的写入速度，GB/s

11.4 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-011.A03LF 2GB

G Skill Intl F4-2400C16-16GFXR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

13.0 13.5
写入速度，GB/s

8.0 11.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1976 2588

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 36ASF2G72LZ-2G1A1 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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SK Hynix HMA81GU7CJR8N-VK 8GB

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Samsung M393B1G70BH0-CK0 8GB

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Samsung M378A1G43EB1-CRC 8GB

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Kingston 9965525-155.A00LF 8GB

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G Skill Intl F4-4000C18-16GVK 16GB

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AMD AE34G1601U1 4GB

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Kingston KN2M64-ETB 8GB

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Crucial Technology BLT4G4D26AFTA.8FBD 4GB

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Patriot Memory (PDP Systems) 2400 CL11 Series 8GB

Patriot Memory (PDP Systems) 2400 CL11 Series 8GB

Kingston 9965589-030.D01G 8GB

Kingston 9965589-030.D01G 8GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CMW32GX4M2C3200C16 16GB

Corsair CMW32GX4M2C3200C16 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Patriot Memory (PDP Systems) PSD44G213381 4GB

Patriot Memory (PDP Systems) PSD44G213381 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

G Skill Intl F4-3400C16-8GTZSW 8GB

G Skill Intl F4-3400C16-8GTZSW 8GB