Kingston 9905403-011.A03LF 2GB vs G Skill Intl F4-3200C14-16GTZR 16GB

总分

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

总分

G Skill Intl F4-3200C14-16GTZR 16GB

G Skill Intl F4-3200C14-16GTZR 16GB

差异规格评论

差异

Kingston 9905403-011.A03LF 2GB

需要考虑的原因
Kingston 9905403-011.A03LF 2GB

报告一个错误

G Skill Intl F4-3200C14-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时
更快的读取速度，GB/s

19.1 13

测试中的平均数值
更快的写入速度，GB/s

15.9 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-011.A03LF 2GB

G Skill Intl F4-3200C14-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 26
读取速度，GB/s

13.0 19.1
写入速度，GB/s

8.0 15.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1976 3876

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

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A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB