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Kingston 9905403-011.A03LF 2GB
V-GEN D4H8GS24A8 8GB

Kingston 9905403-011.A03LF 2GB vs V-GEN D4H8GS24A8 8GB

总分
star star star star star
Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

总分
star star star star star
V-GEN D4H8GS24A8 8GB

V-GEN D4H8GS24A8 8GB

差异 规格 评论

差异

Kingston 9905403-011.A03LF 2GB 需要考虑的原因
Kingston 9905403-011.A03LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 92
    左右 71% 更低的延时
V-GEN D4H8GS24A8 8GB 需要考虑的原因
V-GEN D4H8GS24A8 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.1 left arrow 13
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.2 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-011.A03LF 2GB
V-GEN D4H8GS24A8 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 92
  • 读取速度，GB/s
    13.0 left arrow 15.1
  • 写入速度，GB/s
    8.0 left arrow 8.2
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1976 left arrow 1640

Kingston 9905403-011.A03LF 2GB RAM的比较

Kingston 99P5471-016.A00LF 8GB
Kingston 99P5429-006.A00Ls 8GB

V-GEN D4H8GS24A8 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M378B5673EH1-CF8 2GB
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内存RAM
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内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
V-GEN D4H8GS24A8 8GB
V-GEN D4H8GS24A8 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
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内存RAM
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
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内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-2666C19-8GRS 8GB
G Skill Intl F4-2666C19-8GRS 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3000C14-16GVRD 16GB
G Skill Intl F4-3000C14-16GVRD 16GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Avant Technology W641GU42J5213NC 8GB
Avant Technology W641GU42J5213NC 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G6672 2GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
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Kingston 9905678-005.A00G 8GB
内存RAM
SK Hynix HMT41GS6BFR8A-PB 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
内存RAM