Kingston 9905403-038.A00LF 4GB vs Crucial Technology BL16G26C16U4B.16FD 16GB

总分

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

总分

Crucial Technology BL16G26C16U4B.16FD 16GB

Crucial Technology BL16G26C16U4B.16FD 16GB

差异规格评论

差异

Kingston 9905403-038.A00LF 4GB

需要考虑的原因
Kingston 9905403-038.A00LF 4GB

报告一个错误

Crucial Technology BL16G26C16U4B.16FD 16GB

需要考虑的原因
Crucial Technology BL16G26C16U4B.16FD 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 36

左右 -20% 更低的延时
更快的读取速度，GB/s

17.2 13

测试中的平均数值
更快的写入速度，GB/s

14.5 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-038.A00LF 4GB

Crucial Technology BL16G26C16U4B.16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 30
读取速度，GB/s

13.0 17.2
写入速度，GB/s

8.0 14.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2268 3505

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T5663RZ3-CE6 2GB

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Micron Technology 18ASF2G72PDZ-2G3D1 16GB

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Kingston 9905403-444.A00LF 4GB

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Corsair CMD32GX4M2C3466C16W 16GB

Corsair CMD32GX4M2C3466C16W 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

G Skill Intl F4-4000C18-16GTRS 16GB

G Skill Intl F4-4000C18-16GTRS 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMK32GX4M4K4000C19 8GB

Corsair CMK32GX4M4K4000C19 8GB