Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Samsung M471A5244CB0-CTD 4GB

总分

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

总分

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

差异规格评论

差异

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 39

左右 36% 更低的延时

Samsung M471A5244CB0-CTD 4GB

需要考虑的原因
Samsung M471A5244CB0-CTD 4GB

报告一个错误

更快的读取速度，GB/s

15.5 12.6

测试中的平均数值
更快的写入速度，GB/s

11.5 7.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Samsung M471A5244CB0-CTD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 39
读取速度，GB/s

12.6 15.5
写入速度，GB/s

7.2 11.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2051 2264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905403-444.A00LF 4GB

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Apacer Technology D12.2326WH.001 16GB

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G Skill Intl F4-4000C15-8GTRG 8GB

G Skill Intl F4-4000C15-8GTRG 8GB

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Corsair CMY16GX3M4A2133C8 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

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Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston KHX426C13/8G 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

G Skill Intl F4-3200C16-16GTZSW 16GB

G Skill Intl F4-3200C16-16GTZSW 16GB