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Kingston 9905403-038.A00LF 4GB
G Skill Intl F4-3200C14-16GVR 16GB

Kingston 9905403-038.A00LF 4GB vs G Skill Intl F4-3200C14-16GVR 16GB

总分
star star star star star
Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

总分
star star star star star
G Skill Intl F4-3200C14-16GVR 16GB

G Skill Intl F4-3200C14-16GVR 16GB

差异 规格 评论

差异

Kingston 9905403-038.A00LF 4GB 需要考虑的原因
Kingston 9905403-038.A00LF 4GB
报告一个错误
G Skill Intl F4-3200C14-16GVR 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GVR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 36
    左右 -44% 更低的延时
  • 更快的读取速度，GB/s
    19.4 left arrow 13
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.1 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-038.A00LF 4GB
G Skill Intl F4-3200C14-16GVR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 25
  • 读取速度，GB/s
    13.0 left arrow 19.4
  • 写入速度，GB/s
    8.0 left arrow 16.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2268 left arrow 3912

Kingston 9905403-038.A00LF 4GB RAM的比较

Kingston 99U5402-052.A00LF 4GB
Kingston 16ATF2G64AZ-2G1B1 8GB

G Skill Intl F4-3200C14-16GVR 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 99U5429-014.A00LF 4GB
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Kingston 9905624-051.A00G 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
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内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
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内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Transcend Information JM2666HSB-8G 8GB
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内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Transcend Information TS1GLH64V4B 8GB
Transcend Information TS1GLH64V4B 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Kingston RB24D4U7S8MB-8 8GB
Kingston RB24D4U7S8MB-8 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Samsung SH5724G4UNC26P2-SC 32GB
Samsung SH5724G4UNC26P2-SC 32GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM