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AMD AE34G1601U1 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

AMD AE34G1601U1 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

差异 规格 评论

差异

AMD AE34G1601U1 4GB 需要考虑的原因
AMD AE34G1601U1 4GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 67
    左右 -179% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 3.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
AMD AE34G1601U1 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    67 left arrow 24
  • 读取速度，GB/s
    6.8 left arrow 16.0
  • 写入速度，GB/s
    3.6 left arrow 12.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    998 left arrow 2925

AMD AE34G1601U1 4GB RAM的比较

Panram International Corporation PUD31600C94GNJK 4GB
Kingston 9905428-196.A00LF 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Kingston 9905783-025.A01G 16GB
Kingston 9905783-025.A01G 16GB
Transcend Information AQD-SD4U16GN21-SE 16GB
Transcend Information AQD-SD4U16GN21-SE 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK32GX4M2K4133C19 16GB
Corsair CMK32GX4M2K4133C19 16GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Samsung M471A2K43EB1-CTD 16GB
Samsung M471A2K43EB1-CTD 16GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Samsung M391A1G43EB1-CRC 8GB
Samsung M391A1G43EB1-CRC 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMK32GX4M4K4266C19 8GB
Corsair CMK32GX4M4K4266C19 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
SK Hynix HMA851S6DJR6N-XN 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Super Talent F21UB8GS 8GB
Super Talent F21UB8GS 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 9965600-005.A00G 16GB
Kingston 9965600-005.A00G 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905625-066.A00G 16GB
Kingston 9905625-066.A00G 16GB
内存RAM