Kingston 9905403-061.A00LF 2GB vs Corsair CM4B8G1J2800K14K 8GB

总分

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分

Corsair CM4B8G1J2800K14K 8GB

Corsair CM4B8G1J2800K14K 8GB

差异规格评论

差异

Kingston 9905403-061.A00LF 2GB

需要考虑的原因
Kingston 9905403-061.A00LF 2GB

报告一个错误

Corsair CM4B8G1J2800K14K 8GB

需要考虑的原因
Corsair CM4B8G1J2800K14K 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 57

左右 -111% 更低的延时
更快的读取速度，GB/s

17.4 6.8

测试中的平均数值
更快的写入速度，GB/s

13.1 5.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-061.A00LF 2GB

Corsair CM4B8G1J2800K14K 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

57 27
读取速度，GB/s

6.8 17.4
写入速度，GB/s

5.5 13.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1244 2912

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5273EB0-CK0 4GB

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G Skill Intl F4-3600C16-8GTZ 8GB

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SK Hynix HYMP512S64CP8-Y5 1GB

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SK Hynix V-GeN D4H4GL30A8TX5 4GB

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Crucial Technology BLS16G4D32AESC.M16FE 16GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Crucial Technology BLE4G4D30AEEA.K8FE 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Kingston 9905711-032.A00G 8GB

Kingston 9905711-032.A00G 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMK16GX4M4B3600C18 4GB

Corsair CMK16GX4M4B3600C18 4GB

Samsung DDR3 8GB 1600MHz 8GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Essencore Limited IM44GU48N24-FFFHAB 4GB

Essencore Limited IM44GU48N24-FFFHAB 4GB