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Kingston 9905403-061.A00LF 2GB
Corsair CMD16GX4M4C3200C16 4GB

Kingston 9905403-061.A00LF 2GB vs Corsair CMD16GX4M4C3200C16 4GB

总分
star star star star star
Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分
star star star star star
Corsair CMD16GX4M4C3200C16 4GB

Corsair CMD16GX4M4C3200C16 4GB

差异 规格 评论

差异

Kingston 9905403-061.A00LF 2GB 需要考虑的原因
Kingston 9905403-061.A00LF 2GB
报告一个错误
Corsair CMD16GX4M4C3200C16 4GB 需要考虑的原因
Corsair CMD16GX4M4C3200C16 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 57
    左右 -104% 更低的延时
  • 更快的读取速度，GB/s
    18.3 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 5.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-061.A00LF 2GB
Corsair CMD16GX4M4C3200C16 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    57 left arrow 28
  • 读取速度，GB/s
    6.8 left arrow 18.3
  • 写入速度，GB/s
    5.5 left arrow 15.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1244 left arrow 3535

Kingston 9905403-061.A00LF 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMX8GX3M1A1600C11 8GB

Corsair CMD16GX4M4C3200C16 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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Kingston 9965698-001.A00G 16GB
内存RAM
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内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Corsair CMD16GX4M4C3200C16 4GB
Corsair CMD16GX4M4C3200C16 4GB
内存RAM
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Samsung M471B5173DB0-YK0 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
内存RAM
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Corsair CMSX4GX3M1A1600C9 4GB
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G Skill Intl F4-3200C14-16GTZKY 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
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内存RAM
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Elpida EBJ17RG4EFWA-DJ-F 16GB
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Samsung M471A1G44AB0-CWE 8GB
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