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Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3600C17-16GTZ 16GB

Kingston 9905403-061.A00LF 2GB vs G Skill Intl F4-3600C17-16GTZ 16GB

总分
star star star star star
Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分
star star star star star
G Skill Intl F4-3600C17-16GTZ 16GB

G Skill Intl F4-3600C17-16GTZ 16GB

差异 规格 评论

差异

Kingston 9905403-061.A00LF 2GB 需要考虑的原因
Kingston 9905403-061.A00LF 2GB
报告一个错误
G Skill Intl F4-3600C17-16GTZ 16GB 需要考虑的原因
G Skill Intl F4-3600C17-16GTZ 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 57
    左右 -104% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.5 left arrow 5.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3600C17-16GTZ 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    57 left arrow 28
  • 读取速度，GB/s
    6.8 left arrow 18.0
  • 写入速度，GB/s
    5.5 left arrow 16.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1244 left arrow 3741

Kingston 9905403-061.A00LF 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMX8GX3M1A1600C11 8GB

G Skill Intl F4-3600C17-16GTZ 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Apacer Technology GD2.0927WH.001 8GB
Apacer Technology GD2.0927WH.001 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM4B8G2J2666A15D 8GB
Corsair CM4B8G2J2666A15D 8GB
内存RAM
Samsung M471B5173BH0-CK0 4GB
Samsung M471B5173BH0-CK0 4GB
Kingston HP32D4U8S8HC-8X 8GB
Kingston HP32D4U8S8HC-8X 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Samsung M378A5244CB0-CRC 4GB
Samsung M378A5244CB0-CRC 4GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Essencore Limited IM4AGU88N26-GIIHMB 16GB
Essencore Limited IM4AGU88N26-GIIHMB 16GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Transcend Information JM2400HSB-8G 8GB
Transcend Information JM2400HSB-8G 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Samsung V-GeN D4S8GL32A8TL 8GB
Samsung V-GeN D4S8GL32A8TL 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston 9965596-035.B00G 4GB
Kingston 9965596-035.B00G 4GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMT16GX4M2K4000C19 8GB
Corsair CMT16GX4M2K4000C19 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMD16GX4M4B3200C15 4GB
Corsair CMD16GX4M4B3200C15 4GB
内存RAM