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Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3600C18-8GTZR 8GB

Kingston 9905403-061.A00LF 2GB vs G Skill Intl F4-3600C18-8GTZR 8GB

总分
star star star star star
Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分
star star star star star
G Skill Intl F4-3600C18-8GTZR 8GB

G Skill Intl F4-3600C18-8GTZR 8GB

差异 规格 评论

差异

Kingston 9905403-061.A00LF 2GB 需要考虑的原因
Kingston 9905403-061.A00LF 2GB
报告一个错误
G Skill Intl F4-3600C18-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-3600C18-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 57
    左右 -97% 更低的延时
  • 更快的读取速度，GB/s
    19.3 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.0 left arrow 5.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3600C18-8GTZR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    57 left arrow 29
  • 读取速度，GB/s
    6.8 left arrow 19.3
  • 写入速度，GB/s
    5.5 left arrow 16.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1244 left arrow 3687

Kingston 9905403-061.A00LF 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMX8GX3M1A1600C11 8GB

G Skill Intl F4-3600C18-8GTZR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Peak Electronics 256X64M-67E 2GB
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内存RAM
Kingston 99U5469-045.A00LF 4GB
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内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
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内存RAM
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内存RAM
SK Hynix HMA81GS6DJR8N-VK 8GB
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G Skill Intl F4-3200C16-16GVKA 16GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
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Panram International Corporation W4U2400PS-8G 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BL16G32C16U4R.16FE 16GB
Crucial Technology BL16G32C16U4R.16FE 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Crucial Technology BLS16G4D30BESB.16FD 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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Avant Technology W6451U66J7240ND 4GB
内存RAM
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Kingston 99U5471-012.A00LF 4GB
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Samsung M471A1K43CB1-CRCR 8GB
内存RAM
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Kingston 99U5474-028.A00LF 4GB
Mushkin MR[A/B]4U300JJJM16G 16GB
Mushkin MR[A/B]4U300JJJM16G 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
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Samsung M471A1A43DB0-CPB 8GB
内存RAM