Kingston 9905403-061.A00LF 2GB vs Micron Technology 16ATF1G64HZ-2G1B1 8GB

总分

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

差异规格评论

差异

Kingston 9905403-061.A00LF 2GB

需要考虑的原因
Kingston 9905403-061.A00LF 2GB

报告一个错误

Micron Technology 16ATF1G64HZ-2G1B1 8GB

需要考虑的原因
Micron Technology 16ATF1G64HZ-2G1B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 57

左右 -46% 更低的延时
更快的读取速度，GB/s

13.8 6.8

测试中的平均数值
更快的写入速度，GB/s

10.5 5.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-061.A00LF 2GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

57 39
读取速度，GB/s

6.8 13.8
写入速度，GB/s

5.5 10.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1244 2443

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology F6451U64F9333G 4GB

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V-Color Technology Inc. TD8G16C16-UHK 8GB

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Samsung M378B5273DH0-CH9 4GB

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Corsair CMK16GX4M1Z3600C18 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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SK Hynix HMA41GR7MFR4N-TF 8GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

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G Skill Intl F4-4000C19-8GTZSW 8GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Crucial Technology BLS16G4D30AESC.M16FE 16GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB