Kingston 9905403-061.A00LF 2GB vs Mushkin 99[2/7/4]197F 8GB

总分

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分

Mushkin 99[2/7/4]197F 8GB

Mushkin 99[2/7/4]197F 8GB

差异规格评论

差异

Kingston 9905403-061.A00LF 2GB

需要考虑的原因
Kingston 9905403-061.A00LF 2GB

报告一个错误

Mushkin 99[2/7/4]197F 8GB

需要考虑的原因
Mushkin 99[2/7/4]197F 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 57

左右 -111% 更低的延时
更快的读取速度，GB/s

12.8 6.8

测试中的平均数值
更快的写入速度，GB/s

11.0 5.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-061.A00LF 2GB

Mushkin 99[2/7/4]197F 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

57 27
读取速度，GB/s

6.8 12.8
写入速度，GB/s

5.5 11.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1244 2785

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMW64GX4M2D3000C16 32GB

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G Skill Intl F4-3200C16-8GVSB 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Panram International Corporation D4N2400PS-8G 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMD32GX4M4C3000C15 8GB

Corsair CMD32GX4M4C3000C15 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMK128GX4M8B3000C16 16GB

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Kingston 9905403-444.A00LF 4GB

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Crucial Technology CT16G4SFD832A.C16FN 16GB

Crucial Technology CT16G4SFD832A.C16FN 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB