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Kingston 9905403-061.A00LF 2GB
Samsung M378A2G43AB3-CWE 16GB

Kingston 9905403-061.A00LF 2GB vs Samsung M378A2G43AB3-CWE 16GB

总分
star star star star star
Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分
star star star star star
Samsung M378A2G43AB3-CWE 16GB

Samsung M378A2G43AB3-CWE 16GB

差异 规格 评论

差异

Kingston 9905403-061.A00LF 2GB 需要考虑的原因
Kingston 9905403-061.A00LF 2GB
报告一个错误
Samsung M378A2G43AB3-CWE 16GB 需要考虑的原因
Samsung M378A2G43AB3-CWE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 57
    左右 -63% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 5.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-061.A00LF 2GB
Samsung M378A2G43AB3-CWE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    57 left arrow 35
  • 读取速度，GB/s
    6.8 left arrow 17.6
  • 写入速度，GB/s
    5.5 left arrow 12.1
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1244 left arrow 3221

Kingston 9905403-061.A00LF 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMX8GX3M1A1600C11 8GB

Samsung M378A2G43AB3-CWE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston KHX2400C14D4/16G 16GB
Kingston KHX2400C14D4/16G 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Essencore Limited KD4AGS88A-26N1600 16GB
Essencore Limited KD4AGS88A-26N1600 16GB
内存RAM
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Avant Technology W6451U66J5213ND 4GB
Avant Technology W6451U66J5213ND 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
G Skill Intl F4-3200C16-8GVR 8GB
G Skill Intl F4-3200C16-8GVR 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
V-GEN D4H4GL26A8TS5 4GB
V-GEN D4H4GL26A8TS5 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair MK16GX44A2666C16 4GB
Corsair MK16GX44A2666C16 4GB
内存RAM
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Corsair CMG32GX4M2E3200C16 16GB
Corsair CMG32GX4M2E3200C16 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Apacer Technology 78.CAGPP.ARW0B 8GB
Apacer Technology 78.CAGPP.ARW0B 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Mushkin 99[2/7/4]205F 8GB
Mushkin 99[2/7/4]205F 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Samsung M393A2K40CB2-CTD 16GB
Samsung M393A2K40CB2-CTD 16GB
内存RAM