Kingston 9905403-090.A01LF 4GB vs G Skill Intl F4-4400C16-8GVK 8GB

总分

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

总分

G Skill Intl F4-4400C16-8GVK 8GB

G Skill Intl F4-4400C16-8GVK 8GB

差异规格评论

差异

Kingston 9905403-090.A01LF 4GB

需要考虑的原因
Kingston 9905403-090.A01LF 4GB

报告一个错误

G Skill Intl F4-4400C16-8GVK 8GB

需要考虑的原因
G Skill Intl F4-4400C16-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 27

左右 -29% 更低的延时
更快的读取速度，GB/s

20.9 13.9

测试中的平均数值
更快的写入速度，GB/s

21.0 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-090.A01LF 4GB

G Skill Intl F4-4400C16-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 21
读取速度，GB/s

13.9 20.9
写入速度，GB/s

8.9 21.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2418 4250

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N

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Corsair CMY8GX3M2A2666C10 4GB

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Corsair CMW64GX4M2E3200C16 32GB