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Kingston 9905403-090.A01LF 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
比较
Kingston 9905403-090.A01LF 4GB vs Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
总分
Kingston 9905403-090.A01LF 4GB
总分
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-090.A01LF 4GB
报告一个错误
更快的写入速度,GB/s
8.9
6.5
测试中的平均数值
需要考虑的原因
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
报告一个错误
低于PassMark测试中的延时,ns
24
27
左右 -13% 更低的延时
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-090.A01LF 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
24
读取速度,GB/s
13.9
13.9
写入速度,GB/s
8.9
6.5
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2418
2113
Kingston 9905403-090.A01LF 4GB RAM的比较
Samsung M386B4G70DM0-YK03 32GB
Kingston K531R8-ETF 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9905403-090.A01LF 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
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Corsair CMW16GX4M2C3600C18 8GB
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Samsung M471B5173DB0-YK0 4GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
Samsung M4 70T5663CZ3-CE6 2GB
G Skill Intl F4-3200C15-16GTZSW 16GB
Samsung M393B5270CH0-CH9 4GB
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Apacer Technology 78.C1GET.9K10C 8GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-2400C15-16GTZR 16GB
Kingston 9905471-006.A00LF 4GB
G Skill Intl F4-3466C16-8GTZR 8GB
SpecTek Incorporated ?????????????????? 2GB
Samsung M3 78T6553BZ0-KCC 512MB
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