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Kingston 9905403-090.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
比较
Kingston 9905403-090.A01LF 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
总分
Kingston 9905403-090.A01LF 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-090.A01LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
45
左右 40% 更低的延时
更快的读取速度,GB/s
13.9
6.9
测试中的平均数值
更快的写入速度,GB/s
8.9
6.3
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
报告一个错误
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-090.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
45
读取速度,GB/s
13.9
6.9
写入速度,GB/s
8.9
6.3
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, TBD2 V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2418
1499
Kingston 9905403-090.A01LF 4GB RAM的比较
Samsung M386B4G70DM0-YK03 32GB
Kingston K531R8-ETF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB RAM的比较
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
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G Skill Intl F4-4000C15-8GVK 8GB
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Kingston 9905403-090.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
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Corsair CMT128GX4M8X3600C18 16GB
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Golden Empire CL15-15-15 D4-2400 4GB
Kingston KVR16N11/8-SP 8GB
Avant Technology W641GU42J5213N3 8GB
Samsung M393B1K70QB0-CK0 8GB
Samsung M393A1G43DB1-CRC 8GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A2K43EB1-CWE 16GB
报告一个错误
×
Bug description
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