RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston 9905403-090.A01LF 4GB
Samsung M393A1G43EB1-CRC 8GB

Kingston 9905403-090.A01LF 4GB vs Samsung M393A1G43EB1-CRC 8GB

总分
star star star star star
Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

总分
star star star star star
Samsung M393A1G43EB1-CRC 8GB

Samsung M393A1G43EB1-CRC 8GB

差异 规格 评论

差异

Kingston 9905403-090.A01LF 4GB 需要考虑的原因
Kingston 9905403-090.A01LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 49
    左右 45% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.9 left arrow 8.3
    测试中的平均数值
Samsung M393A1G43EB1-CRC 8GB 需要考虑的原因
Samsung M393A1G43EB1-CRC 8GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-090.A01LF 4GB
Samsung M393A1G43EB1-CRC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 49
  • 读取速度，GB/s
    13.9 left arrow 10.9
  • 写入速度，GB/s
    8.9 left arrow 8.3
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2418 left arrow 2413

Kingston 9905403-090.A01LF 4GB RAM的比较

Samsung M386B4G70DM0-YK03 32GB
Kingston K531R8-ETF 4GB

Samsung M393A1G43EB1-CRC 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Avant Technology J644GU44J1293NF 32GB
Avant Technology J644GU44J1293NF 32GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
INTENSO M418039 8GB
INTENSO M418039 8GB
内存RAM
Crucial Technology RM51264BA1339.16FR 4GB
Crucial Technology RM51264BA1339.16FR 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston K6VDX7-HYD 8GB
Kingston K6VDX7-HYD 8GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
Corsair CM4B4G1J2400A14K 4GB
Corsair CM4B4G1J2400A14K 4GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
EVGA 16G-D4-2666-MR 4GB
EVGA 16G-D4-2666-MR 4GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Apacer Technology D12.2356WS.001 8GB
Apacer Technology D12.2356WS.001 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMK16GX4M2Z3600C14 8GB
Corsair CMK16GX4M2Z3600C14 8GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Corsair CMD32GX4M4B3466C16 8GB
Corsair CMD32GX4M4B3466C16 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Mushkin MR[A/B]280HHHH16G 16GB
Mushkin MR[A/B]280HHHH16G 16GB
内存RAM
Samsung V-GeN D4S16GL32A8TS 16GB
Samsung V-GeN D4S16GL32A8TS 16GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-4266C17-16GTZRB 16GB
G Skill Intl F4-4266C17-16GTZRB 16GB
内存RAM