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Kingston 9905403-134.A00LF 2GB
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

Kingston 9905403-134.A00LF 2GB vs Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

总分
star star star star star
Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

总分
star star star star star
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

差异 规格 评论

差异

Kingston 9905403-134.A00LF 2GB 需要考虑的原因
Kingston 9905403-134.A00LF 2GB
报告一个错误
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB 需要考虑的原因
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 24
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    21.3 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.9 left arrow 9.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-134.A00LF 2GB
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 23
  • 读取速度，GB/s
    15.5 left arrow 21.3
  • 写入速度，GB/s
    9.3 left arrow 16.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2402 left arrow 4151

Kingston 9905403-134.A00LF 2GB RAM的比较

Kingston Kingston2GB800 2GB
Team Group Inc. TEAMGROUP-D4-3866 4GB

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Corsair CMK32GX4M4B3000C15 8GB
Corsair CMK32GX4M4B3000C15 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Transcend Information TS512MLH64V4H 4GB
Transcend Information TS512MLH64V4H 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3466C16-8GTZR 8GB
G Skill Intl F4-3466C16-8GTZR 8GB
内存RAM
Kingston 99P5474-013.A00LF 4GB
Kingston 99P5474-013.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-4800C19-8GTZRC 8GB
G Skill Intl F4-4800C19-8GTZRC 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston LV32D4S2S8HD-8 8GB
Kingston LV32D4S2S8HD-8 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Essencore Limited IM44GU48N28-GGGHM 4GB
Essencore Limited IM44GU48N28-GGGHM 4GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Avant Technology W641GU42J9266NB 8GB
Avant Technology W641GU42J9266NB 8GB
内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
G Skill Intl F4-3000C16-16GSXWB 16GB
G Skill Intl F4-3000C16-16GSXWB 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Samsung M378A5244CB0-CVF 4GB
Samsung M378A5244CB0-CVF 4GB
内存RAM