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Kingston 9905403-134.A00LF 2GB
G Skill Intl F4-4000C18-8GTZR 8GB
比较
Kingston 9905403-134.A00LF 2GB vs G Skill Intl F4-4000C18-8GTZR 8GB
总分
Kingston 9905403-134.A00LF 2GB
总分
G Skill Intl F4-4000C18-8GTZR 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-134.A00LF 2GB
报告一个错误
低于PassMark测试中的延时,ns
24
29
左右 17% 更低的延时
需要考虑的原因
G Skill Intl F4-4000C18-8GTZR 8GB
报告一个错误
更快的读取速度,GB/s
18
15.5
测试中的平均数值
更快的写入速度,GB/s
16.5
9.3
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-134.A00LF 2GB
G Skill Intl F4-4000C18-8GTZR 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
24
29
读取速度,GB/s
15.5
18.0
写入速度,GB/s
9.3
16.5
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2402
3779
Kingston 9905403-134.A00LF 2GB RAM的比较
Kingston Kingston2GB800 2GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
G Skill Intl F4-4000C18-8GTZR 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3400C16-8GSXW 8GB
Kingston 9905403-134.A00LF 2GB
G Skill Intl F4-4000C18-8GTZR 8GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-2133C15-8GFXR 8GB
Kingston 99U5584-004.A00LF 4GB
Kingston 9965662-018.A00G 32GB
Kingston KP4T2F-PSB 4GB
Apacer Technology 78.CAGQE.C750B 8GB
AMD R534G1601U1S-UO 4GB
Patriot Memory (PDP Systems) PSD34G13332S 4GB
Samsung M378B5673FH0-CH9 2GB
Kingston 9965589-035.D00G 16GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
Crucial Technology CT51264AC800.C16FC 4GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3466C16-8GTZSW 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
报告一个错误
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Bug description
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