STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Micron Technology 4ATF51264HZ-2G6E1 4GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 14.2

测试中的平均数值

Micron Technology 4ATF51264HZ-2G6E1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G6E1 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 63

左右 -66% 更低的延时
更快的写入速度，GB/s

10.3 1,447.3

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 38
读取速度，GB/s

3,231.0 14.2
写入速度，GB/s

1,447.3 10.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

478 2148

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Kingston MSI24D4S7S8MB-8 8GB

Kingston MSI24D4S7S8MB-8 8GB

Samsung M378A1K43EB2-CWE 8GB

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Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-3466C16-16GTZSW 16GB

G Skill Intl F4-3466C16-16GTZSW 16GB