Kingston 9905403-134.A00LF 2GB vs Hyundai Inc AR32C16S8K2HU416R 8GB

总分

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

总分

Hyundai Inc AR32C16S8K2HU416R 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB

差异规格评论

差异

Kingston 9905403-134.A00LF 2GB

需要考虑的原因
Kingston 9905403-134.A00LF 2GB

报告一个错误

Hyundai Inc AR32C16S8K2HU416R 8GB

需要考虑的原因
Hyundai Inc AR32C16S8K2HU416R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 24

左右 -20% 更低的延时
更快的读取速度，GB/s

19 15.5

测试中的平均数值
更快的写入速度，GB/s

15.1 9.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-134.A00LF 2GB

Hyundai Inc AR32C16S8K2HU416R 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 20
读取速度，GB/s

15.5 19.0
写入速度，GB/s

9.3 15.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2402 3410

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 36ASF2G72PZ-2G1A2 16GB

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Crucial Technology BLS16G4D240FSC.16FBR 16GB

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Corsair CMSO16GX4M1A2133C15 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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G Skill Intl F4-3000C16-16GRS 16GB

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Crucial Technology BLS4G4D240FSB.8FARG 4GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB

Samsung M471B5173DB0-YK0 4GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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Wilk Elektronik S.A. GR2133D464L15S/8G 8GB