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Kingston 9905403-156.A00LF 2GB
Corsair CMW16GX4M2Z3600C18 8GB

Kingston 9905403-156.A00LF 2GB vs Corsair CMW16GX4M2Z3600C18 8GB

总分
star star star star star
Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分
star star star star star
Corsair CMW16GX4M2Z3600C18 8GB

Corsair CMW16GX4M2Z3600C18 8GB

差异 规格 评论

差异

Kingston 9905403-156.A00LF 2GB 需要考虑的原因
Kingston 9905403-156.A00LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 29
    左右 38% 更低的延时
Corsair CMW16GX4M2Z3600C18 8GB 需要考虑的原因
Corsair CMW16GX4M2Z3600C18 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.2 left arrow 17.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 13.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-156.A00LF 2GB
Corsair CMW16GX4M2Z3600C18 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    18 left arrow 29
  • 读取速度，GB/s
    17.7 left arrow 18.2
  • 写入速度，GB/s
    13.1 left arrow 15.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2926 left arrow 3559

Kingston 9905403-156.A00LF 2GB RAM的比较

Super Talent L89 11/2011 LOGIN. 4GB
Samsung M393B1K70EB0-CH9 8GB

Corsair CMW16GX4M2Z3600C18 8GB RAM的比较

Corsair CMK64GX4M4K3733C17 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CMW16GX4M2Z4600C18 8GB
Corsair CMW16GX4M2Z4600C18 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Corsair CMW16GX4M2Z3600C18 8GB
Corsair CMW16GX4M2Z3600C18 8GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF1G64HZ-2G3H1 8GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Kingston 9905625-036.A00G 16GB
Kingston 9905625-036.A00G 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMW16GX4M2K4000C19 8GB
Corsair CMW16GX4M2K4000C19 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
A-DATA Technology DDR4 3000 8GB
A-DATA Technology DDR4 3000 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C22-16GRS 16GB
G Skill Intl F4-3200C22-16GRS 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CM4X4GF2666Z16K4 4GB
Corsair CM4X4GF2666Z16K4 4GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
SK Hynix HMA82GS6CJR8N-XN 16GB
SK Hynix HMA82GS6CJR8N-XN 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Avant Technology J642GU42J7240N2 16GB
Avant Technology J642GU42J7240N2 16GB
内存RAM
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Micron Technology 16KTF1G64HZ-1G9E2 8GB
V-GEN D4S8GL30A8TS5 8GB
V-GEN D4S8GL30A8TS5 8GB
内存RAM