Kingston 9905403-156.A00LF 2GB vs Crucial Technology BLS16G4D32AESC.M16FE 16GB

总分

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分

Crucial Technology BLS16G4D32AESC.M16FE 16GB

Crucial Technology BLS16G4D32AESC.M16FE 16GB

差异规格评论

差异

Kingston 9905403-156.A00LF 2GB

需要考虑的原因
Kingston 9905403-156.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

18 29

左右 38% 更低的延时

Crucial Technology BLS16G4D32AESC.M16FE 16GB

需要考虑的原因
Crucial Technology BLS16G4D32AESC.M16FE 16GB

报告一个错误

更快的读取速度，GB/s

18.1 17.7

测试中的平均数值
更快的写入速度，GB/s

14.9 13.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-156.A00LF 2GB

Crucial Technology BLS16G4D32AESC.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

18 29
读取速度，GB/s

17.7 18.1
写入速度，GB/s

13.1 14.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2926 3673

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS16G4D32AESC.M16FE 16GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Crucial Technology CT8G4SFS8266.M8FD 8GB

Crucial Technology CT8G4SFS8266.M8FD 8GB

Samsung M393B2G70BH0-CK0 16GB

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Micron Technology 8ATF1G64HZ-2G3E2 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB