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Kingston 9905403-156.A00LF 2GB
Crucial Technology BLS4G4D240FSE.8FE 4GB

Kingston 9905403-156.A00LF 2GB vs Crucial Technology BLS4G4D240FSE.8FE 4GB

总分
star star star star star
Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FE 4GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

差异 规格 评论

差异

Kingston 9905403-156.A00LF 2GB 需要考虑的原因
Kingston 9905403-156.A00LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 65
    左右 72% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 17.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 8.7
    测试中的平均数值
Crucial Technology BLS4G4D240FSE.8FE 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FE 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-156.A00LF 2GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    18 left arrow 65
  • 读取速度，GB/s
    17.7 left arrow 17.5
  • 写入速度，GB/s
    13.1 left arrow 8.7
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2926 left arrow 1921

Kingston 9905403-156.A00LF 2GB RAM的比较

Super Talent L89 11/2011 LOGIN. 4GB
Samsung M393B1K70EB0-CH9 8GB

Crucial Technology BLS4G4D240FSE.8FE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9905743-043.A00G 16GB
Kingston 9905743-043.A00G 16GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston ACR24D4U7S8MB-8 8GB
Kingston ACR24D4U7S8MB-8 8GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Apacer Technology 78.CAGNK.4040B 8GB
Apacer Technology 78.CAGNK.4040B 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Kingston 8ATF1G64HZ-2G3B2 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston HP24D4S7S8MBP-8 8GB
Kingston HP24D4S7S8MBP-8 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Transcend Information JM3200HSE-32G 32GB
Transcend Information JM3200HSE-32G 32GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-3200C16-16GTZRX 16GB
G Skill Intl F4-3200C16-16GTZRX 16GB
内存RAM