Kingston 9905403-156.A00LF 2GB vs Golden Empire CL16-16-16 D4-3200 4GB

总分

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分

Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

差异规格评论

差异

Kingston 9905403-156.A00LF 2GB

需要考虑的原因
Kingston 9905403-156.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

18 25

左右 28% 更低的延时

Golden Empire CL16-16-16 D4-3200 4GB

需要考虑的原因
Golden Empire CL16-16-16 D4-3200 4GB

报告一个错误

更快的读取速度，GB/s

18.6 17.7

测试中的平均数值
更快的写入速度，GB/s

14.3 13.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-156.A00LF 2GB

Golden Empire CL16-16-16 D4-3200 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

18 25
读取速度，GB/s

17.7 18.6
写入速度，GB/s

13.1 14.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2926 3413

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK32GX4M4C3000C16 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Samsung M386B4G70DM0-CMA4 32GB

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Mushkin MR[ABC]4U320GJJM16G 16GB

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G Skill Intl F4-3600C16-8GVKC 8GB

G Skill Intl F4-3600C16-8GVKC 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

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Kingston 9965516-112.A00LF 16GB

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Patriot Memory (PDP Systems) PSD416G24002 16GB

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A-DATA Technology AM1P26KC8T1-BAAS 8GB