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Kingston 9905403-174.A00LF 2GB
Kingston K821PJ-MIB 16GB

Kingston 9905403-174.A00LF 2GB vs Kingston K821PJ-MIB 16GB

总分
star star star star star
Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

总分
star star star star star
Kingston K821PJ-MIB 16GB

Kingston K821PJ-MIB 16GB

差异 规格 评论

差异

Kingston 9905403-174.A00LF 2GB 需要考虑的原因
Kingston 9905403-174.A00LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 37
    左右 35% 更低的延时
  • 更快的读取速度，GB/s
    14.2 left arrow 13.8
    测试中的平均数值
Kingston K821PJ-MIB 16GB 需要考虑的原因
Kingston K821PJ-MIB 16GB
报告一个错误
  • 更快的写入速度，GB/s
    11.0 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-174.A00LF 2GB
Kingston K821PJ-MIB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 37
  • 读取速度，GB/s
    14.2 left arrow 13.8
  • 写入速度，GB/s
    9.5 left arrow 11.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2222 left arrow 2458

Kingston 9905403-174.A00LF 2GB RAM的比较

Crucial Technology CT25664BA1339.M8FK 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125U6TFR8C-H9 2GB

Kingston K821PJ-MIB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Essencore Limited IM4AGS88N26-GIIHA0 16GB
Essencore Limited IM4AGS88N26-GIIHA0 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-8GTZKW 8GB
G Skill Intl F4-3200C16-8GTZKW 8GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Kingston K821PJ-MIB 16GB
Kingston K821PJ-MIB 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-2133C15-4GVK 4GB
G Skill Intl F4-2133C15-4GVK 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
内存RAM
Samsung M378A1K43DB2-CTD 8GB
Samsung M378A1K43DB2-CTD 8GB
G Skill Intl F4-2666C15-8GVB 8GB
G Skill Intl F4-2666C15-8GVB 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Chun Well Technology Holding Limited MD4U1632160DCW 16G
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Avant Technology J641GU42J9266NL 8GB
Avant Technology J641GU42J9266NL 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMK32GX4M4A2666C16 8GB
Corsair CMK32GX4M4A2666C16 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Transcend Information TS1GSH64V1H 8GB
Transcend Information TS1GSH64V1H 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
V-Color Technology Inc. TD416G26D819-VC 16GB
V-Color Technology Inc. TD416G26D819-VC 16GB
内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
Crucial Technology BLS16G4D240FSE.16FD 16GB
Crucial Technology BLS16G4D240FSE.16FD 16GB
内存RAM