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Kingston 9905403-434.A00LF 4GB
Kingston HP37D4U1S8ME-16XR 16GB

Kingston 9905403-434.A00LF 4GB vs Kingston HP37D4U1S8ME-16XR 16GB

总分
star star star star star
Kingston 9905403-434.A00LF 4GB

Kingston 9905403-434.A00LF 4GB

总分
star star star star star
Kingston HP37D4U1S8ME-16XR 16GB

Kingston HP37D4U1S8ME-16XR 16GB

差异 规格 评论

差异

Kingston 9905403-434.A00LF 4GB 需要考虑的原因
Kingston 9905403-434.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 34
    左右 26% 更低的延时
Kingston HP37D4U1S8ME-16XR 16GB 需要考虑的原因
Kingston HP37D4U1S8ME-16XR 16GB
报告一个错误
  • 更快的读取速度，GB/s
    19.2 left arrow 12.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.9 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-434.A00LF 4GB
Kingston HP37D4U1S8ME-16XR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 34
  • 读取速度，GB/s
    12.4 left arrow 19.2
  • 写入速度，GB/s
    8.4 left arrow 14.9
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2157 left arrow 3527

Kingston 9905403-434.A00LF 4GB RAM的比较

A-DATA Technology AD5U480016G-B 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston HP37D4U1S8ME-16XR 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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内存RAM
Kingston 9905403-434.A00LF 4GB
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Kingston HP37D4U1S8ME-16XR 16GB
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内存RAM
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4133C19-8GTZRF 8GB
G Skill Intl F4-4133C19-8GTZRF 8GB
内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Kingston 9905598-026.A00G 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
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Samsung M471A1G44BB0-CWE 8GB
内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Kingston 9905744-006.A00G 16GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Kingston 9965669-032.A00G 16GB
Kingston 9965669-032.A00G 16GB
内存RAM