Kingston 9905403-437.A01LF 4GB vs Corsair CMR16GX4M2Z3200C16 8GB

总分

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

总分

Corsair CMR16GX4M2Z3200C16 8GB

Corsair CMR16GX4M2Z3200C16 8GB

差异规格评论

差异

Kingston 9905403-437.A01LF 4GB

需要考虑的原因
Kingston 9905403-437.A01LF 4GB

报告一个错误

Corsair CMR16GX4M2Z3200C16 8GB

需要考虑的原因
Corsair CMR16GX4M2Z3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 39

左右 -77% 更低的延时
更快的读取速度，GB/s

18.7 13

测试中的平均数值
更快的写入速度，GB/s

14.7 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-437.A01LF 4GB

Corsair CMR16GX4M2Z3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 22
读取速度，GB/s

13.0 18.7
写入速度，GB/s

8.6 14.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2201 3291

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR3 1600 4GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB

Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Corsair CMR16GX4M2Z3200C16 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

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Crucial Technology BLS8G4D26BFSC.16FBD2 8GB