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Kingston ACR16D3LFS1KBG/2G 2GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Kingston ACR16D3LFS1KBG/2G 2GB vs Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

总分
star star star star star
Kingston ACR16D3LFS1KBG/2G 2GB

Kingston ACR16D3LFS1KBG/2G 2GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

差异 规格 评论

差异

Kingston ACR16D3LFS1KBG/2G 2GB 需要考虑的原因
Kingston ACR16D3LFS1KBG/2G 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 30
    左右 10% 更低的延时
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 7.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.9 left arrow 4.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston ACR16D3LFS1KBG/2G 2GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 30
  • 读取速度，GB/s
    7.1 left arrow 15.5
  • 写入速度，GB/s
    4.2 left arrow 12.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    969 left arrow 3044

Kingston ACR16D3LFS1KBG/2G 2GB RAM的比较

A-DATA Technology AD73I1B1672EG 2GB
Samsung M378A1G43EB1-CPB 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR16D3LFS1KBG/2G 2GB
Kingston ACR16D3LFS1KBG/2G 2GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Apacer Technology 78.D2GF2.4010B 16GB
Apacer Technology 78.D2GF2.4010B 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Apacer Technology 78.CAGMR.ARC0B 8GB
Apacer Technology 78.CAGMR.ARC0B 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston KHX3200C16D4/4GX 4GB
Kingston KHX3200C16D4/4GX 4GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Apacer Technology 78.CAGN4.4020B 8GB
Apacer Technology 78.CAGN4.4020B 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMV8GX4M1L2400C16 8GB
Corsair CMV8GX4M1L2400C16 8GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair CMK128GX4M8A2666C16 16GB
Corsair CMK128GX4M8A2666C16 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
SK Hynix HMA81GS6CJRJR-VK 8GB
SK Hynix HMA81GS6CJRJR-VK 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3866C18-8GTZ 8GB
G Skill Intl F4-3866C18-8GTZ 8GB
内存RAM