PNY Electronics PNY 2GB vs Kingston KHX3200C16D4/4GX 4GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Kingston KHX3200C16D4/4GX 4GB

Kingston KHX3200C16D4/4GX 4GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

Kingston KHX3200C16D4/4GX 4GB

需要考虑的原因
Kingston KHX3200C16D4/4GX 4GB

报告一个错误

更快的读取速度，GB/s

17.3 13.8

测试中的平均数值
更快的写入速度，GB/s

14.0 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Kingston KHX3200C16D4/4GX 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

13.8 17.3
写入速度，GB/s

8.4 14.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3112

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G30C15U4B.M8FE1 8GB

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SK Hynix HMT425S6AFR6A-PB 2GB

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Kingston 99U5469-045.A00LF 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Micron Technology TEAMGROUP-UD4-2400 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB

Crucial Technology CT51264BC160B.M16F 4GB

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Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Kingmax Semiconductor GLNG43F-18---------- 8GB

Kingmax Semiconductor GLNG43F-18---------- 8GB

Corsair VS2GB1333D4 2GB

Corsair VS2GB1333D4 2GB

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Crucial Technology CT16G4SFD824A.C16FJ 16GB

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Corsair CMX8GX3M2A2000C9 4GB

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A-DATA Technology AM2P24HC8T1-BUSS 8GB

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A-DATA Technology DQKD1A08 1GB

G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F4-3200C16-16GRS 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMR32GX4M4C3000C15 8GB

Corsair CMR32GX4M4C3000C15 8GB