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Kingston 9905403-444.A00LF 4GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB

Kingston 9905403-444.A00LF 4GB vs A-DATA Technology AO2P21FC8R2-BRGS 8GB

总分
star star star star star
Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

总分
star star star star star
A-DATA Technology AO2P21FC8R2-BRGS 8GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

差异 规格 评论

差异

Kingston 9905403-444.A00LF 4GB 需要考虑的原因
Kingston 9905403-444.A00LF 4GB
报告一个错误
A-DATA Technology AO2P21FC8R2-BRGS 8GB 需要考虑的原因
A-DATA Technology AO2P21FC8R2-BRGS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 35
    左右 -30% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 6.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-444.A00LF 4GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 27
  • 读取速度，GB/s
    11.5 left arrow 18.7
  • 写入速度，GB/s
    6.5 left arrow 13.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1994 left arrow 3495

Kingston 9905403-444.A00LF 4GB RAM的比较

Samsung M378B5273BH1-CH9 4GB
Corsair CMZ32GX3M4A1866C10 8GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
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SK Hynix HYMP512S64CP8-Y5 1GB
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内存RAM
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内存RAM
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内存RAM
Samsung 1600 CL10 Series 8GB
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内存RAM
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Samsung M471B1G73QH0-YK0 8GB
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SK Hynix HMA81GS6CJR8N-VK 8GB
内存RAM