Kingston 9905403-444.A00LF 4GB vs Corsair CMD16GX4M2B3866C18 8GB

总分

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

总分

Corsair CMD16GX4M2B3866C18 8GB

Corsair CMD16GX4M2B3866C18 8GB

差异规格评论

差异

Kingston 9905403-444.A00LF 4GB

需要考虑的原因
Kingston 9905403-444.A00LF 4GB

报告一个错误

Corsair CMD16GX4M2B3866C18 8GB

需要考虑的原因
Corsair CMD16GX4M2B3866C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 35

左右 -75% 更低的延时
更快的读取速度，GB/s

19.2 11.5

测试中的平均数值
更快的写入速度，GB/s

14.8 6.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-444.A00LF 4GB

Corsair CMD16GX4M2B3866C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 20
读取速度，GB/s

11.5 19.2
写入速度，GB/s

6.5 14.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1994 3326

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD8GX3M2A2933C12 4GB

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G Skill Intl F4-4400C19-8GTZSW 8GB

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Kingston HP32D4U8S8HC-8XR 8GB

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Panram International Corporation M424016 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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EVGA 8GX-D4-3000-MR 8GB

EVGA 8GX-D4-3000-MR 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

AMD R538G1601U2S-UO 8GB

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Corsair CMK16GX4M2Z3600C14 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix GKE160SO102408-2400 16GB

SK Hynix GKE160SO102408-2400 16GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Corsair CMK16GX4M2B3000C15 8GB

Corsair CMK16GX4M2B3000C15 8GB