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Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3600C18-32GTZR 32GB

Kingston 9905403-444.A00LF 4GB vs G Skill Intl F4-3600C18-32GTZR 32GB

总分
star star star star star
Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

总分
star star star star star
G Skill Intl F4-3600C18-32GTZR 32GB

G Skill Intl F4-3600C18-32GTZR 32GB

差异 规格 评论

差异

Kingston 9905403-444.A00LF 4GB 需要考虑的原因
Kingston 9905403-444.A00LF 4GB
报告一个错误
G Skill Intl F4-3600C18-32GTZR 32GB 需要考虑的原因
G Skill Intl F4-3600C18-32GTZR 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 35
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.3 left arrow 6.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3600C18-32GTZR 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 30
  • 读取速度，GB/s
    11.5 left arrow 17.5
  • 写入速度，GB/s
    6.5 left arrow 16.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1994 left arrow 3837

Kingston 9905403-444.A00LF 4GB RAM的比较

Samsung M378B5273BH1-CH9 4GB
Corsair CMZ32GX3M4A1866C10 8GB

G Skill Intl F4-3600C18-32GTZR 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3600C18-32GTZR 32GB
G Skill Intl F4-3600C18-32GTZR 32GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
Kingston 9905625-011.A00G 8GB
Kingston 9905625-011.A00G 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Crucial Technology CT8G4DFS8213.M8FH 8GB
Crucial Technology CT8G4DFS8213.M8FH 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. GR3200S464L22/16G 16GB
Wilk Elektronik S.A. GR3200S464L22/16G 16GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3000C15-4GVRB 4GB
G Skill Intl F4-3000C15-4GVRB 4GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Kingston 9905630-039.A00G 16GB
Kingston 9905630-039.A00G 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905598-039.A00G 16GB
Kingston 9905598-039.A00G 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin 99[2/7/4]198F 8GB
Mushkin 99[2/7/4]198F 8GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMD16GX4M4B3200C14 4GB
Corsair CMD16GX4M4B3200C14 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston MSI24D4S7S7MH-16 16GB
Kingston MSI24D4S7S7MH-16 16GB
内存RAM
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Essencore Limited KD4AGU880-36A180X 16GB
Essencore Limited KD4AGU880-36A180X 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
内存RAM