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Kingston 9905403-444.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
比较
Kingston 9905403-444.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
总分
Kingston 9905403-444.A00LF 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-444.A00LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
35
60
左右 42% 更低的延时
更快的读取速度,GB/s
11.5
7.8
测试中的平均数值
更快的写入速度,GB/s
6.5
2.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
报告一个错误
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-444.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
60
读取速度,GB/s
11.5
7.8
写入速度,GB/s
6.5
2.8
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1994
1505
Kingston 9905403-444.A00LF 4GB RAM的比较
Samsung M378B5273BH1-CH9 4GB
Corsair CMZ32GX3M4A1866C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB RAM的比较
Samsung M393B1K70QB0-CK0 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1G70BH0-CK0 8GB
Kingston 9965589-035.D00G 16GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology BLS8G4D26BFSE.16FB 8GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3300C16-8GTZSW 8GB
Kingston 99U5584-004.A00LF 4GB
Avant Technology J642GU42J5213NF 16GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS8G4D26BFSC.16FD2 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-2666C18-8GTZR 8GB
Corsair VSA2GSDS667C4 2GB
G Skill Intl F4-3200C16-16GSXFB 16GB
Kingston 9905316-106.A02LF 1GB
Kingston 9905678-029.A00G 8GB
Kingston 99U5471-052.A00LF 8GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9905625-029.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMT128GX4M8X3600C18 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston KF3200C20S4/16GX 16GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-4000C19-4GTZ 4GB
Corsair CMD8GX3M2A2933C12 4GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
报告一个错误
×
Bug description
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