Kingston 9905403-447.A00LF 4GB vs Crucial Technology BLM16G44C19U4BL.M8FB 16GB

总分

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

总分

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

差异规格评论

差异

Kingston 9905403-447.A00LF 4GB

需要考虑的原因
Kingston 9905403-447.A00LF 4GB

报告一个错误

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

需要考虑的原因
Crucial Technology BLM16G44C19U4BL.M8FB 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 -44% 更低的延时
更快的读取速度，GB/s

18.3 13.7

测试中的平均数值
更快的写入速度，GB/s

16.7 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-447.A00LF 4GB

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 25
读取速度，GB/s

13.7 18.3
写入速度，GB/s

8.2 16.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2208 3911

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology GD2.0927WH.001 8GB

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Micron Technology 8ATF1G64AZ-2G1A1 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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SK Hynix HMA81GU6DJR8N-WM 8GB

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Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

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G Skill Intl F4-2666C18-16GRS 16GB

Samsung M393B1K70CH0-CH9 8GB

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Kingston HX432C15PB3/16 16GB

Kingston HX432C15PB3/16 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB