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Kingston 9905403-447.A00LF 4GB
Hyundai Inc AR36C18S8K2HU416R 8GB

Kingston 9905403-447.A00LF 4GB vs Hyundai Inc AR36C18S8K2HU416R 8GB

总分
star star star star star
Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

总分
star star star star star
Hyundai Inc AR36C18S8K2HU416R 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB

差异 规格 评论

差异

Kingston 9905403-447.A00LF 4GB 需要考虑的原因
Kingston 9905403-447.A00LF 4GB
报告一个错误
Hyundai Inc AR36C18S8K2HU416R 8GB 需要考虑的原因
Hyundai Inc AR36C18S8K2HU416R 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 36
    左右 -89% 更低的延时
  • 更快的读取速度，GB/s
    20 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.5 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-447.A00LF 4GB
Hyundai Inc AR36C18S8K2HU416R 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 19
  • 读取速度，GB/s
    13.7 left arrow 20.0
  • 写入速度，GB/s
    8.2 left arrow 17.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 3499

Kingston 9905403-447.A00LF 4GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-467.A00LF 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Hyundai Inc AR36C18S8K2HU416R 8GB
Hyundai Inc AR36C18S8K2HU416R 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
内存RAM
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMX8GX3M2A1600C11 4GB
Avant Technology W641GU42J7240NB 8GB
Avant Technology W641GU42J7240NB 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston 9965600-005.A00G 16GB
Kingston 9965600-005.A00G 16GB
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G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
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Corsair CMD32GX4M4B3733C17 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology CT8G4SFS8213.C8FBR1 8GB
Crucial Technology CT8G4SFS8213.C8FBR1 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-3200C15-16GTZKY 16GB
G Skill Intl F4-3200C15-16GTZKY 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMSX32GX4M2A3000C16 16GB
Corsair CMSX32GX4M2A3000C16 16GB
内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CB8GS2400.C8JT 8GB
Crucial Technology CB8GS2400.C8JT 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-2400C15-8GFXR 8GB
G Skill Intl F4-2400C15-8GFXR 8GB
内存RAM
Kingston KHX1600C10D3/8G 8GB
Kingston KHX1600C10D3/8G 8GB
Kllisre D4 8G 8GB
Kllisre D4 8G 8GB
内存RAM