Kingston 9905403-447.A00LF 4GB vs Kingston XW21KG-MIE-NX 8GB

总分

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

总分

Kingston XW21KG-MIE-NX 8GB

Kingston XW21KG-MIE-NX 8GB

差异规格评论

差异

Kingston 9905403-447.A00LF 4GB

需要考虑的原因
Kingston 9905403-447.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 39

左右 8% 更低的延时

Kingston XW21KG-MIE-NX 8GB

需要考虑的原因
Kingston XW21KG-MIE-NX 8GB

报告一个错误

更快的读取速度，GB/s

16.5 13.7

测试中的平均数值
更快的写入速度，GB/s

10.4 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-447.A00LF 4GB

Kingston XW21KG-MIE-NX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 39
读取速度，GB/s

13.7 16.5
写入速度，GB/s

8.2 10.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2208 2680

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX318C10FR/8G 8GB

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Micron Technology HMA81GU6AFR8N-UH 8GB

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A-DATA Technology DDR2 800G 2GB

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Kingston KHX2800C14D4/4GX 4GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

G Skill Intl F4-4000C17-8GTRS 8GB

G Skill Intl F4-4000C17-8GTRS 8GB

Corsair CMK32GX5M2B5600C36 16GB

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Kingston 99U5403-465.A00LF 8GB

Golden Empire CL18-20-20 D4-3600 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Corsair CMT16GX4M2C3200C16 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Samsung M393A1G40DB0-B`B 8GB

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Samsung M378B5673FH0-CH9 2GB

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Kingston HP26D4S9S8MD-8 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

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Kingston ACR26D4S9S8ME-8 8GB

Shenzen Recadata Storage Technology 8GB

Shenzen Recadata Storage Technology 8GB