Kingston 9905458-017.A01LF 4GB vs A-DATA Technology DDR4 2800 8GB

总分

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

总分

A-DATA Technology DDR4 2800 8GB

A-DATA Technology DDR4 2800 8GB

差异规格评论

差异

Kingston 9905458-017.A01LF 4GB

需要考虑的原因
Kingston 9905458-017.A01LF 4GB

报告一个错误

A-DATA Technology DDR4 2800 8GB

需要考虑的原因
A-DATA Technology DDR4 2800 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 25

左右 -19% 更低的延时
更快的读取速度，GB/s

19.1 12.8

测试中的平均数值
更快的写入速度，GB/s

15.1 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905458-017.A01LF 4GB

A-DATA Technology DDR4 2800 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 21
读取速度，GB/s

12.8 19.1
写入速度，GB/s

8.6 15.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2239 3350

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Memphis Electronic D4SO1G724GI-A58SD 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston 99U5458-008.A00LF 4GB

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Corsair CMK16GX4M2B3200C16 8GB

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G Skill Intl F4-4000C16-16GTZRA 16GB

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Corsair CMK32GX4M4K4266C19 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Mushkin MR[A/B]4U300JJJM8G 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Crucial Technology CT16G4SFD824A.C16FHD 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Corsair CMD16GX4M4C3200C16 4GB

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Team Group Inc. Team-Value-800 2GB

Team Group Inc. Team-Value-800 2GB

G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB