Kingston 9905458-017.A01LF 4GB vs Kingston KYXC0V-MID 16GB

总分

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

总分

Kingston KYXC0V-MID 16GB

Kingston KYXC0V-MID 16GB

差异规格评论

差异

Kingston 9905458-017.A01LF 4GB

需要考虑的原因
Kingston 9905458-017.A01LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 31% 更低的延时

Kingston KYXC0V-MID 16GB

需要考虑的原因
Kingston KYXC0V-MID 16GB

报告一个错误

更快的读取速度，GB/s

15.2 12.8

测试中的平均数值
更快的写入速度，GB/s

11.5 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9905458-017.A01LF 4GB

Kingston KYXC0V-MID 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 36
读取速度，GB/s

12.8 15.2
写入速度，GB/s

8.6 11.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2239 2903

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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takeMS International AG TMS2GB264D082-805G 2GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F4-4400C19-32GTRS 32GB

Samsung M471B5273DH0-CH9 4GB

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SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB

SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

G Skill Intl F4-3200C16-8GTZR 8GB

G Skill Intl F4-3200C16-8GTZR 8GB