Samsung M471B5273EB0-CK0 4GB vs Kingston KHX426C13/8G 8GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Kingston KHX426C13/8G 8GB

Kingston KHX426C13/8G 8GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

更快的写入速度，GB/s

8.9 7.5

测试中的平均数值

Kingston KHX426C13/8G 8GB

需要考虑的原因
Kingston KHX426C13/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 40

左右 -38% 更低的延时
更快的读取速度，GB/s

13.7 12.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Kingston KHX426C13/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 29
读取速度，GB/s

12.3 13.7
写入速度，GB/s

8.9 7.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1789 2610

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CM4X8GD3000C16K4 8GB

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Kingston KF552C40-16 16GB

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Kingston LV32D4U2S8ME-16X 16GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Crucial Technology CT4G4DFS8213.C8FDD2 4GB

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Crucial Technology CT16G4SFRA32A.C16FJ 16GB

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Kingston ACR16D3LS1KNG/4G 4GB

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V-Color Technology Inc. TL48G30S8KSRGB15 8GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

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Essencore Limited IM4AGU88N26-GIIHMB 16GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Corsair CMR32GX4M2C3333C16 16GB

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SpecTek Incorporated ?????????????????? 2GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

Samsung M393B5270CH0-CH9 4GB

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Micron Technology 8ATF1G64HZ-3G2R1 8GB

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Kingston 9905403-174.A00LF 2GB

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Micron Technology 4ATF51264HZ-2G3B2 4GB

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Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

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Samsung M378A2G43BB3-CWE 16GB