Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Micron Technology 36ASF4G72PZ-2G3B1 32GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Micron Technology 36ASF4G72PZ-2G3B1 32GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 10

测试中的平均数值

Micron Technology 36ASF4G72PZ-2G3B1 32GB

需要考虑的原因
Micron Technology 36ASF4G72PZ-2G3B1 32GB

报告一个错误

低于PassMark测试中的延时，ns

52 64

左右 -23% 更低的延时
更快的写入速度，GB/s

7.7 2,256.8

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 52
读取速度，GB/s

4,651.3 10.0
写入速度，GB/s

2,256.8 7.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

837 2260

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT102464BA160B.M16 8GB

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Corsair CMT32GX4M2E3200C16 16GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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InnoDisk Corporation M4U0-8GSSKCSJ 8GB

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V-Color Technology Inc. TL48G30S8KSRGB15 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

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Kingston 9905403-515.A00LF 8GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

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G Skill Intl F4-3200C14-32GVK 32GB