AMD AE34G2139U2 4GB vs Crucial Technology BLE8G4D26AFEA.16FBD 8GB

总分

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

差异规格评论

差异

AMD AE34G2139U2 4GB

需要考虑的原因
AMD AE34G2139U2 4GB

报告一个错误

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

需要考虑的原因
Crucial Technology BLE8G4D26AFEA.16FBD 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 56

左右 -70% 更低的延时
更快的读取速度，GB/s

16.6 7.4

测试中的平均数值
更快的写入速度，GB/s

13.3 5.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD AE34G2139U2 4GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

56 33
读取速度，GB/s

7.4 16.6
写入速度，GB/s

5.6 13.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1462 3141

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

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A-DATA Technology DQKD1A08 1GB

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Samsung M3 78T2953EZ3-CF7 1GB

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G Skill Intl F3-14900CL9-4GBSR 4GB

Corsair CM4X16GE2400C16K4 16GB

Corsair CM4X16GE2400C16K4 16GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

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SK Hynix HMT425S6AFR6A-PB 2GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB