RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston 9905458-017.A01LF 4GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
比较
Kingston 9905458-017.A01LF 4GB vs Micron Technology 36ASF2G72PZ-2G3A3 16GB
总分
Kingston 9905458-017.A01LF 4GB
总分
Micron Technology 36ASF2G72PZ-2G3A3 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905458-017.A01LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
37
左右 32% 更低的延时
更快的读取速度,GB/s
12.8
9.8
测试中的平均数值
更快的写入速度,GB/s
8.6
7.9
测试中的平均数值
需要考虑的原因
Micron Technology 36ASF2G72PZ-2G3A3 16GB
报告一个错误
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 9905458-017.A01LF 4GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
37
读取速度,GB/s
12.8
9.8
写入速度,GB/s
8.6
7.9
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2239
2229
Kingston 9905458-017.A01LF 4GB RAM的比较
Kingston 99U5469-052.A00LF 4GB
Kingston 99U5403-185.A00LF 8GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB RAM的比较
SK Hynix HYMP112U64CP8-S5 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905458-017.A01LF 4GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Kingston KHX318C10FR/8G 8GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
Kingston KHX2400C11D3/4GX 4GB
King Tiger Technology Tigo-2400MHz-8G 8GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Neo Forza NMUD480E82-3600 8GB
Samsung M393B2G70BH0-YK0 16GB
G Skill Intl F4-3200C16-8GSX 8GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3866C18-4GTZ 4GB
A-DATA Technology DQVE1908 512MB
Kingston 99U5723-002.A00G 8GB
Samsung M471B1G73DB0-YK0 8GB
Samsung M378A5244CB0-CWE 4GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
Samsung M471B1G73DB0-YK0 8GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Samsung M471B5173EB0-YK0 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Transcend Information TS1GLH64V4B 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
A-DATA Technology DDR4 3000 2OZ 8GB
报告一个错误
×
Bug description
Source link