Kingston 9905458-017.A01LF 4GB vs OCMEMORY OCM3200CL16D-16GBN 8GB

总分

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

总分

OCMEMORY OCM3200CL16D-16GBN 8GB

OCMEMORY OCM3200CL16D-16GBN 8GB

差异规格评论

差异

Kingston 9905458-017.A01LF 4GB

需要考虑的原因
Kingston 9905458-017.A01LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 55

左右 55% 更低的延时

OCMEMORY OCM3200CL16D-16GBN 8GB

需要考虑的原因
OCMEMORY OCM3200CL16D-16GBN 8GB

报告一个错误

更快的读取速度，GB/s

19 12.8

测试中的平均数值
更快的写入速度，GB/s

9.0 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9905458-017.A01LF 4GB

OCMEMORY OCM3200CL16D-16GBN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 55
读取速度，GB/s

12.8 19.0
写入速度，GB/s

8.6 9.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2239 2239

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP512U64CP8-Y5 1GB

Corsair CMT64GX4M8X3000C15 8GB

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SK Hynix HMT31GR7BFR4C-H9 8GB

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Crucial Technology CT16G4SFD8266.C16FD1 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Kingston 9905624-033.A00G 8GB

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Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology CT8G4SFS824A.C8FP 8GB

Crucial Technology CT8G4SFS824A.C8FP 8GB

Kingston 99U5471-030.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

Corsair CMK32GX4M4A2400C12 8GB

Corsair CMK32GX4M4A2400C12 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Corsair CMK16GX4M2A2133C13 8GB

Corsair CMK16GX4M2A2133C13 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

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A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CM4X4GD3000C16K2 4GB

Corsair CM4X4GD3000C16K2 4GB