Kingston 9905458-017.A01LF 4GB vs SK Hynix HMA451U6MFR8N-TF 4GB

总分

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

总分

SK Hynix HMA451U6MFR8N-TF 4GB

SK Hynix HMA451U6MFR8N-TF 4GB

差异规格评论

差异

Kingston 9905458-017.A01LF 4GB

需要考虑的原因
Kingston 9905458-017.A01LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 31% 更低的延时

SK Hynix HMA451U6MFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U6MFR8N-TF 4GB

报告一个错误

更快的读取速度，GB/s

13.4 12.8

测试中的平均数值
更快的写入速度，GB/s

10.3 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905458-017.A01LF 4GB

SK Hynix HMA451U6MFR8N-TF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 36
读取速度，GB/s

12.8 13.4
写入速度，GB/s

8.6 10.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2239 2466

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF1G64AZ-2G6D1 8GB

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Kingston KHX1866C10D3/4G 4GB

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Kingston KP4T2F-PSB 4GB

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Corsair CMW16GX4M2D3600C16 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Kingston KHX3600C18D4/32GX 32GB

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Kingston 9905458-017.A01LF 4GB

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SK Hynix HMA451U6MFR8N-TF 4GB

SK Hynix HMA451U6MFR8N-TF 4GB

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Samsung M471B5673FH0-CF8 2GB

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G Skill Intl F4-4133C19-8GTZSWF 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

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Kingston 9965525-018.A00LF 4GB

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Kingston 9905665-021.A00G 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CMR32GX4M2F3600C18 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Kingston LV32D4U2S8ME-16X 16GB

Kingston LV32D4U2S8ME-16X 16GB