Samsung M393B1K70CH0-YH9 8GB vs G Skill Intl F4-3600C17-4GTZ 4GB

总分

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分

G Skill Intl F4-3600C17-4GTZ 4GB

G Skill Intl F4-3600C17-4GTZ 4GB

差异规格评论

差异

Samsung M393B1K70CH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB

报告一个错误

G Skill Intl F4-3600C17-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-3600C17-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 49

左右 -123% 更低的延时
更快的读取速度，GB/s

21 10.1

测试中的平均数值
更快的写入速度，GB/s

17.7 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-YH9 8GB

G Skill Intl F4-3600C17-4GTZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 22
读取速度，GB/s

10.1 21.0
写入速度，GB/s

7.8 17.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2070 3987

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-4400C17-16GVK 16GB

G Skill Intl F4-4400C17-16GVK 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Corsair CMK16GX4M1E3200C16 16GB

Corsair CMK16GX4M1E3200C16 16GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

G Skill Intl F4-4000C18-8GTZSW 8GB

G Skill Intl F4-4000C18-8GTZSW 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

G Skill Intl F4-4000C15-8GTZR 8GB

G Skill Intl F4-4000C15-8GTZR 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

G Skill Intl F4-3600C17-4GTZ 4GB

G Skill Intl F4-3600C17-4GTZ 4GB

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

Apacer Technology 78.CAGN7.4000C 8GB

Apacer Technology 78.CAGN7.4000C 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Hewlett-Packard 7EH55AA# 8GB

Hewlett-Packard 7EH55AA# 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

G Skill Intl F4-2800C15-4GVRB 4GB

G Skill Intl F4-2800C15-4GVRB 4GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

G Skill Intl F4-3600C19-16GSXKB 16GB

G Skill Intl F4-3600C19-16GSXKB 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Apacer Technology 78.C1GMM.BAC0B 8GB

Apacer Technology 78.C1GMM.BAC0B 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3200C16-16GTZN 16GB

G Skill Intl F4-3200C16-16GTZN 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB