Samsung M393B1K70CH0-YH9 8GB vs Samsung M392B1K70CM0-YH9 8GB

总分

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分

Samsung M392B1K70CM0-YH9 8GB

Samsung M392B1K70CM0-YH9 8GB

差异规格评论

差异

Samsung M393B1K70CH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB

报告一个错误

Samsung M392B1K70CM0-YH9 8GB

需要考虑的原因
Samsung M392B1K70CM0-YH9 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 49

左右 -23% 更低的延时
更快的读取速度，GB/s

11 10.1

测试中的平均数值
更快的写入速度，GB/s

10.0 7.8

测试中的平均数值

规格

完整的技术规格清单

Samsung M393B1K70CH0-YH9 8GB

Samsung M392B1K70CM0-YH9 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

49 40
读取速度，GB/s

10.1 11.0
写入速度，GB/s

7.8 10.0
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2070 2493

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16ATF2G64AZ-3G2E1 16GB

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Samsung M393B1K70CH0-YH9 8GB

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Samsung M392B1K70CM0-YH9 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Corsair CMK64GX4M4K3733C17 16GB

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G Skill Intl F4-3200C16-8GSX 8GB

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Patriot Memory (PDP Systems) 2400 C16 Series 16GB

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Samsung M3 78T2863EHS-CF7 1GB

Panram International Corporation W4N2400PS-8G 8GB

Panram International Corporation W4N2400PS-8G 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

KingSpec KingSpec 16GB

KingSpec KingSpec 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMWB8G1L2666A16W4 8GB

Kingston 99U5474-010.A00LF 2GB

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Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB